规格：电压 @ Rds测量 4.5V,
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 34A, SOIC-8
(EN)
VISHAY
晶体管, N沟道
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0125 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
(EN)
VISHAY
MOSFET, N & P CHANNEL, 12V, 7.6A, POWERP
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 147 A, 30 V, 0.0022 ohm, 4.5 V, 1.6 V
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 0.03OHM, 4A, 1206-8
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.13 ohm, 4.5 V, 1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.029 ohm, 4.5 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 12A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 700mA, 整卷
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
