规格：工作温度最高值 150°C,
NEXPERIA
小信号肖特基二极管, 单, 40 V, 1 A, 570 mV, 9 A, 150 °C
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.15 ohm, 10 V
(EN)
NEXPERIA
单管二极管 齐纳, 3.6 V, 300 mW, SOD-523, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 18 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单管二极管 齐纳, 6.8 V, 350 mW, SOT-23, 6 %, 3 引脚, 150 °C
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
(EN)
NEXPERIA
肖特基整流器, 单, 15 A, SOT-1289, 3 引脚, 580 mV
(EN)
DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 2 W, 500 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 5 MHz, 40 W, 15 A, 5 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 500 mW, 225 mA, 100 hFE
(EN)
MULTICOMP
齐纳二极管阵列, 3.9V, 300mW, SOT-23
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 20 V, 0.017 ohm, 2.5 V, 550 mV
(EN)
DIODES INC.
肖特基整流器, 单, 50 V, 15 A, PowerDI 5, 3 引脚, 520 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 207 A, 30 V, 0.00095 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.00055 ohm, 10 V, 2.1 V
(EN)
ROHM
单管二极管 齐纳, 30 V, 1 W, SOD-106, 2 引脚, 150 °C
(EN)
