规格：功耗 Pd 2.4W,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 196 mohm, -10 V, -4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.019Ω, -7.8A, MICROFET-6
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 100 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -12V, 0.014OHM, -10A, MICROFET-6
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
