规格：功耗 Pd 2W,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, 40 V, 100 MHz, 2 W, -3 A, 220 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 1A SOT-223
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 900 mA, 150 V, 1.2 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 2 W, 6 A, 3 hFE
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 4.7 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.2 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
VISHAY
NPN/PNP MOSFET, 60V, SOIC
(EN)PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 5.1 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 0.021 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.9 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 6.2 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
(EN)
