规格：功耗 Pd 3.1W,
INTERNATIONAL RECTIFIER
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.1 A, -80 V, 0.148 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 50A TO-263AB
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 10 V, 4 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.5 mohm, 8 V, 1.1 V
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 0.03OHM, 4A, 1206-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
