产品分类：双路场效应管MOSFET晶体管,规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
(EN)
VISHAY
Transistor Polarity:Dual N Channel
(EN)
INFINEON
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 22 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 25V, 145A, PQFN-10
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双 N+P 30V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 50 A, 40 V, 0.0048 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 40 V, 0.0079 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
