
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道

INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V

VISHAY
MOSFET, DUAL N CHANNEL, 30V, 7.1A, SOIC-8

VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V

VISHAY
MOSFET, N CH, 20V, 19.8A, SOIC-8

INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V

INTERNATIONAL RECTIFIER
场效应管, MOSFET

VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV

INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0137 ohm, 10 V, 1.8 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.018 ohm, -10 V, -1.9 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC, 整卷

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V

DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V

NXP
场效应管, MOSFET阵列, N与P沟道, 300V, 340MA, 8-SOIC

VISHAY
场效应管, MOSFET, 双路 N 通道, 30V, 0.0093Ω

ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.028 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9.3 A, 30 V, 14 mohm, 10 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V