
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V

STMICROELECTRONICS
双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 10 V, 2.4 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV

VISHAY
MOSFET, DUAL N CHANNEL, 30V, 60A, SOIC-8

ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V

NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V

VISHAY
场效应管, MOSFET, 双N沟道, 30V, 24A, POWERPAIR-8

DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 13.5 A, 30 V, 0.0052 ohm, 10 V, 2.2 V

INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC

ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 6 A, 20 V, 0.018 ohm, 4.5 V, 300 mV

NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363

INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双P沟道, 2W, 8-SOIC

NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV

INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV