产品分类：双路场效应管MOSFET晶体管,
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, 双路N沟道, 25V, SON-8
(EN)
TEXAS INSTRUMENTS
功率场效应管, N沟道, 同步降压, NEXFET, 30V, 40A, SON-8, 整卷
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 500 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 8.6 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)
