
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 40V, SOIC

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V

VISHAY
晶体管, 双N沟道

NEXPERIA
双路场效应管, MOSFET, 双N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.028 ohm, 10 V, 1.6 V

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 30 V, 0.048 ohm, 4.5 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV

INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 55V, SOIC

INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV

INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V

VISHAY
双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV

INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N+P沟道, 30V, SOIC

INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V

NEXPERIA
双路场效应管, MOSFET, N和P沟道, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V