产品分类：场效应管MOSFET晶体管(600V以上),
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-247AB
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 0.204 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-220AB-3
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-220F
(EN)VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
(EN)VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220AB-3
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V 22A TO-220
(EN)
