产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 12V,
NEXPERIA
晶体管, MOSFET, N沟道, 6.4 A, 12 V, 0.021 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 12 V, 0.028 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 12 V, 0.028 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 50A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 9.5A
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 22A, SOIC
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 40A, SOIC, 整卷
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 12 V, 0.0022 ohm, 4.5 V, 500 mV
(EN)
