产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -12V,
INFINEON
场效应管, MOSFET, P沟道, -12V, -16A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -300 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -6.2 A, -12 V, 0.019 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -8.2A, TSSOP-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, 场效应管, MOSFET, P沟道, -12V, -10.2A, 微型FOOT-4
(EN)
