产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 300V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 73 A, 300 V, 45 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 300 V, 0.0255 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 300 V, 24 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 32 A, 300 V, 130 mohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 200 mA, 300 V, 12 ohm, 0 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 3 V
(EN)
