产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 20V,
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 20 V, 6 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, N沟道, DMOS FET, 20V, 1.05A, 3-SOT-23, 整卷
(EN)
INFINEON
场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷
(EN)
VISHAY
N CHANNEL MOSFET, 20V, 60A, SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)VISHAY
场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6
(EN)VISHAY
晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 140 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
(EN)
