产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 20V,
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.039 ohm, 4.5 V, 300 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 915mA, SC-75, 整卷
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 700 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.04 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 2.1 mohm, 4.5 V, 950 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.05 A, 20 V, 0.14 ohm, 4.5 V, 570 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV
(EN)
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 20 V, 7.5 mohm, 10 V, 1 V
(EN)
