产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -20V,
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
功率场效应管, MOSFET, P沟道, -20V, -60A, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -400 mA, -20 V, 0.7 ohm, -4.5 V, -500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 37 mohm, 12 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.039 ohm, 12 V, -800 mV
(EN)
