产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0016 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 830 μohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 1.9A, 3-SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.004 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 161A, D-PAK
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.01917 ohm, 10 V, 1.7 V
(EN)
