产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
ROHM
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V
(EN)ROHM
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0129 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.216 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0032Ω, 160A, TO-252AA-3
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.002 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 16A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 4.5 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.0169 ohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 22 mohm, 10 V, 1.7 V
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 30 V, 2.8 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
(EN)
