产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 850MA, 3-SOT-23, 整卷
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 25A, POWERPAK SO-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0017 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0017 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.8 A, 30 V, 0.135 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.055 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 79 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 30 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0072 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 192 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 100A, PQFN-8
(EN)
