产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.0215 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.2 A, 30 V, 0.03 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 211 A, 30 V, 0.0008 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 218 A, 30 V, 0.0009 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道+肖特基, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.00605 ohm, 10 V, 1.75 V
(EN)
