产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.014 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.028 ohm, 10 V, 2 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 4 A, 30 V, 39 mohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.014 ohm, 16 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 70 A, 30 V, 7.6 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 μohm, 10 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 6 A, 30 V, 24 mohm, 10 V, 2.5 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 150 mohm, -4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
