产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 5 ohm, 4 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET , 30V, 6.3A, N通道*NIC*
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 1.7A
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.0205 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 30V, 5A, 3-SOT-23
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
(EN)
