产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 30V,
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0096OHM, 16.5A, MLP-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道+肖特基, 14.5 A, 30 V, 0.0045 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0075 ohm, 10 V, 1.8 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0034 ohm, 10 V, 1.74 V
