产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -30V,
VISHAY
场效应管, MOSFET, P沟道, -30V, -60A, PowerPAKSO, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 2.7A TO-236, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
(EN)VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V
(EN)
INFINEON
MOSFET, P CHANNEL, -30V, -24A, PQFN-8
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.0167 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.036 ohm, -10 V, -2.5 V
(EN)
