产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -30V,
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.036 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.105 ohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -30 V, 0.005 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.07 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 50 mohm, -10 V, -2.7 V
(EN)INFINEON
场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.021 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.024 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 11 A, -30 V, 13.5 mohm, -10 V, -2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
(EN)
VISHAY
MOSFET Transistor, P Channel, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
(EN)
