产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -30V,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.3A, SC-70
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -300 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.021 ohm, -10 V, -2.5 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.2 A, -30 V, 0.138 ohm, -10 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.6 A, -30 V, 0.195 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.11 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.11 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.075 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.075 ohm, -4.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -30 V, 235 mohm, -10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -960 mA, -30 V, 0.139 ohm, -10 V, -1.45 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -30 V, 0.12 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)
