产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -30V,
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.165 ohm, -4 V, -1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 30V V(BR)DSS
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
(EN)
INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0045 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)
