产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -30V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
(EN)
VISHAY
场效应管, MOSFET晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -12A, SOIC
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 4mA
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0033 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)VISHAY
场效应管, P沟道, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
(EN)
