产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -200V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, -16 A, -200 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -200V, 6.5A, TO-204AA
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC
(EN)
VISHAY
场效应管, P通道, MOSFET, -200V, 6.5A, D2-PAK
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 0.54Ω, -7.3A, TO-263-3
(EN)VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 11.5mA
(EN)
SEMELAB
晶体管, MOSFET, 音频, P沟道, -16 A, -200 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 20W, D2-PAK
(EN)
