产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 25V,
INFINEON
场效应管, MOSFET, N沟道, 25V, 100A, PQFN-8
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 25V, 60A, PQFN-30
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 100A, 0.0009Ω, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0022 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 40A, PQFN-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56
(EN)
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.0007 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 680 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
