产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 25V,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 75A, D-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V
(EN)
NXP
场效应管, MOSFET, N沟道, 25V, 100A, 4-SOT-669
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00635 ohm, 10 V, 1.81 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 25 V, 0.0077 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 25 V, 0.0077 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 25 V, 7.1 mohm, 10 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 25V, 40A, SOIC-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 25V, 60A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 25V, 30A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 25V, 50A, SOIC, 整卷
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V
(EN)
