产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0037 ohm, 20 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0025 ohm, 15 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 100V, 85A, D2PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 0.0056 ohm, 10 V, 2 V
(EN)
