产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 100 V, 45 mohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 640 mA, 100 V, 1 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0031 ohm, 10 V, 2.7 V
(EN)
