产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 75 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 0.0075 ohm, 10 V, 2.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)
SEMIKRON
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.007 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)
