产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 95 A, 100 V, 0.004 ohm, 10 V, 3.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.06 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 151 A, 100 V, 0.0024 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 51 A, 100 V, 0.0099 ohm, 10 V, 3.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)
