产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.24 ohm, 5 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 100 V, 3.4 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 100V, 150MA, 3-SOT-23, 整卷
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 7490 μohm, 5 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
