产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 4.3 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0054 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 0.00816 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.015 ohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 20 A, 100 V, 17 mohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 100V, 18A, POWERPAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 22 A, 100 V, 25200 μohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 100V, 7.8A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 6.4 mohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.009 ohm, 10 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 30A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.009 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 100 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 60 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
(EN)
