产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 100V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 7.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 2.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0087 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.1 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 96 A, 100 V, 0.008 ohm, 20 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 35 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 100V, 4.3A, TO-252-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 100V, 0.0114OHM, 49A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 41 A, 100 V, 55 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)
