产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 80V,
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0015 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0016 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 80V, 39A, DPAK, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
VISHAY
MOSFET, N CHANNEL, 80V, 40A, TO-252-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)
