产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 500V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 500 V, 52 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 44 A, 500 V, 120 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 60 A, 500 V, 100 mohm, 10 V, 2.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 500V, 4.7A, IPAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 7.5A, 500V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 500V, 4.5A TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO-263-3
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.31 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO247AC-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 0.85 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
