产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 60V, 400mA, TO-92
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.054 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 60 V, 16 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 45A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 60 V, 16.5 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)
