产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
VISHAY
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 295 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 37.5 mohm, 10 V, 2.91 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 450 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.023 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 85 A, 60 V, 10 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.084 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.7 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 60 V, 100 mohm, 5 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 11.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
