产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 10A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 16A, TO-220
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.005 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8.7A, POWERPAK 1212
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 4.1A, TSOP
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3780 μohm, 5 V, 1.7 V
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
(EN)
