产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 12A, DPAK-3
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 110A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.6 A, 60 V, 0.0094 ohm, 20 V, 3.2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3.3 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 170 A, 60 V, 5.6 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)
