产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
VISHAY
场效应管, MOSFET, N沟道, 60V, 10.3A, SOIC-8, 整卷
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 60V, 300MA, 3-SOT-23, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 60V, 195A, TO-262-3
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 60A, POWERPAKSO-8
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 3.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.6 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 6.9 A, 60 V, 45 mohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0066 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 49 A, 60 V, 0.0074 ohm, 10 V, 2.1 V
(EN)
