产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, ESD保护
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 100 mohm, 10 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 5 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.006 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0056 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 1.6OHM, 115mA, SOT-523F-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 60 V, 7.5 ohm, 10 V, 1.85 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
