产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 60V,
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 60 V, 0.0072 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 20 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0051 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0073 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0105 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
