产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -60V,
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-252-3
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0055 ohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -6 A, -60 V, 0.037 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.102 ohm, -10 V, -2.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.18 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)
