产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 250 V, 94 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 11A, D-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 7.5A, 1206
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 0.0018 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 82A TO-220AB
(EN)
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.105 ohm, 10 V, 3 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 16A, D-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
